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Proceedings Paper

InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications
Author(s): K. Y. Han; C. W. Chen; J. H. Quigley; M. Hafich; G. Y. Robinson; R. Chang; D. L. Lile
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Paper Abstract

This paper discusses the development of InP based Charge-Coupled Device addressed Multi-Quantum Well Spatial Light Modulators. These devices are based on the quantum-confined Stark effect and promise to be very fast, with response times in the fractional nsec range.

Paper Details

Date Published: 28 November 1989
PDF: 8 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962027
Show Author Affiliations
K. Y. Han, Colorado State University (United States)
C. W. Chen, Colorado State University (United States)
J. H. Quigley, Colorado State University (United States)
M. Hafich, Colorado State University (United States)
G. Y. Robinson, Colorado State University (United States)
R. Chang, Colorado State University (United States)
D. L. Lile, Colorado State University (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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