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Proceedings Paper

Wide-Wavelength InQaAs/InP PIN Photodiodes Sensitive From 0.7 To 1.55 um
Author(s): S. Kagawa; K. Inoue; I Ogawa; Y. Takada; T. Shibata
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Paper Abstract

We have demonstrated for the first time a wide-wavelength InGaAs/InP PIN photodiode for optical communication systems working area the 0.7 to 1.55 um wavelength region. The diode has a planar structure with InP/InGaAs/InP double-hetero epitaxial wafer grown by chloride VPE. To obtain high-sensitivity to 0.7 um wavelength light, it has a very thin InP cap layer (0.06 um) and a shallow p-n junction (0.27 um) is formed in the InGaAs layer. Quantum efficiencies for 0.78 um and 1.3 um wavelengths are 76% and 81%, respectively. Dark current and capacitance are as low as 30 pA and 0.53 pF at 5V. Frequency response is flat up to 1 GHz over 5V at 0.78 um.

Paper Details

Date Published: 28 November 1989
PDF: 7 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962026
Show Author Affiliations
S. Kagawa, Fujitsu Limited (Japan)
K. Inoue, Fujitsu Limited (Japan)
I Ogawa, Fujitsu Limited (Japan)
Y. Takada, Fujitsu Limited (Japan)
T. Shibata, Fujitsu Limited (Japan)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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