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Proceedings Paper

An InP-InGaAs Light Amplifying Optical Switch
Author(s): S. A. Feld; C. W. Wilmsen; M. Hafich; J. Quigley; G. Y. Robinson
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Paper Abstract

Optical devices which perform logic functions and that can be cascaded, require optical gain. This mandates that the device contain an active element. We have designed such a device which we call a light amplifying optical swtich (LAOS). The gain is obtained from an NPN heterojunction bipolar phototransistor which is in series with a light emitting diode or laser. The first LAOS structure has been fabricated from lattice matched InGaAs on InP using gas source molecular beam epitaxy. A strained layer optical electrical absorber is sandwiched between the light emitter and the detector in order to reduce positive feedback and prevent latching. Analysis indicates that electrical gains of 3000 and optical gains as high as 100 can be obtained.

Paper Details

Date Published: 28 November 1989
PDF: 7 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962025
Show Author Affiliations
S. A. Feld, Colorado State University (United States)
C. W. Wilmsen, Colorado State University (United States)
M. Hafich, Colorado State University (United States)
J. Quigley, Colorado State University (United States)
G. Y. Robinson, Colorado State University (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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