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Proceedings Paper

Pseudomorphic GaInP Schottky Diode On InP
Author(s): S. Loualiche; A. Ginudi; D. Le Corre; A. Lecrosnier
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Paper Abstract

GaInP material has been used as a high gap semiconductor on InP to fabricate Schottky diodes. The experimental result shows that the device exhibits good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a Gallium composition of 25%, a GaInP thickness of 100 A, and has a barrier height of 0.73 eV, an ideality factor of 1.1 and a reverse current of 0.3 nA at -1V.

Paper Details

Date Published: 28 November 1989
PDF: 8 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962023
Show Author Affiliations
S. Loualiche, Centre National d'Etudes des Telecommunications (CNET) (France)
A. Ginudi, Centre National d'Etudes des Telecommunications (CNET) (France)
D. Le Corre, Centre National d'Etudes des Telecommunications (CNET) (France)
A. Lecrosnier, Centre National d'Etudes des Telecommunications (CNET) (France)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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