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Proceedings Paper

A Monolithically Inletrated Receiver Front-End Comprista& Ion-Implanted Lateral Interdigitated IngaAs Pin And Inp Jfet Devices
Author(s): W. S. Lee; S. A. Kitching; S. W. Bland
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Paper Abstract

An optical receiver front-end consisting of a lateral interdigitated InGaAs PIN photodetector integrated with an InP JFET amplifier has been fabricated by selective ion implantation. The lateral interdigitated InGaAs PlN is integrated here for the first time. The advantages of the lateral detector structure are its inherently low capacitance and the simplification of the InGaAs material growth requirement to a single layer. A quasi-planar integration approach has been developed in conjunction with a two-level metallisation interconnect scheme employing polyimide as the inter-level dielectric. An optical sensitivity of -29 dBm has been measured at 560 Mbit/s and 1.3 µm wavelength.

Paper Details

Date Published: 28 November 1989
PDF: 7 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962021
Show Author Affiliations
W. S. Lee, STC Technology Ltd. (United Kingdom)
S. A. Kitching, STC Technology Ltd. (United Kingdom)
S. W. Bland, STC Technology Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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