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Proceedings Paper

A Study Of Enhanced Barrier Height Gates For n-InP MESFET's
Author(s): A. A. Iliadis; W. Lee; O. A. Aina
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Paper Abstract

We developed a surface passivation technique to enhance the barrier height of n-InP and studied the stability of the resultant contacts. The results showed that the passivation produced nearly-ideal Schottky contacts with substantially enhanced barrier heights (Φb = 0.83). We used the passivation technique to fabricate an n-channel InP FET with enhanced barrier height gates. The devices showed high stability, a maximum transconductance of 60 mS/mm and high break-down voltages. The high stability and performance of these devices demonstrates the potential this passivation holds in developing gate metallization technology for InP.

Paper Details

Date Published: 28 November 1989
PDF: 5 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962019
Show Author Affiliations
A. A. Iliadis, University of Maryland (United States)
W. Lee, University of Maryland (United States)
O. A. Aina, Allied Signal Aerospace Company (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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