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Proceedings Paper

Rapid Thermal Annealing Of S-Implanted Sent-Insulating InP
Author(s): Parimala Karighattam; D. A. Thompson
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Paper Abstract

Semi-insulating Fe-doped InP samples have been implanted with 60 keV S+ ions at 300 K, over the dose range of 5x1012 to 5x1015 ions cm-2. Subsequent to implantation, they have been annealed, without encapsulation, using Rapid thermal annealing procedures at temperatures ranging from 650-800°C and for times 2-50 s. The samples have been analysed using Photoluminescence and Hall effect/Conductivity measurements in order to establish the anneal conditions necessary to produce best dopant activation. Results indicate the best anneal condition to be ~800°C for 10 s. Maximum electrical activations ~66% and carrier concentrations up to 3x1019 cm-3 have been obtained. PL spectra of S+ implanted and annealed InP show new features at 1.378-1.380 eV that can be ascribed to S impurities. Samples implanted with lx1014 cm-2 and 1x1015cm-2 (S+Si) ions have also been studied.

Paper Details

Date Published: 28 November 1989
PDF: 13 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962018
Show Author Affiliations
Parimala Karighattam, McMaster University (Canada)
D. A. Thompson, McMaster University (Canada)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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