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Proceedings Paper

Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To Inp-Based Photonic Devices
Author(s): A. Katz; S. N. G. Chu; P. M. Thomas; W. C. Dautremont-Smith
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Paper Abstract

Pt/Ti low resistance non-alloyed ohmic contacts to p-InP-based contact layers in photonic devices, which were formed by rapid thermal processing (RTP), were studied. E-gun evaporated Pt/Ti metallization deposited onto 1.5 •1019 cm -3 Zn doped In0.53Ga0.47As yielded the best electrical performance. These contacts were ohmic as deposited with a specific contact resistance value of 3.0•10-4Ωcm2. RTP at higher temperatures led to decrease of the specific contact resistance to 3.4 •10-8Ωcm2 (0.08Ωmm) as a result of heating at 450°C for 30 sec. This heat treatment caused only a limited interfacial reaction (about 20 nm thick) between the Ti and the InGaAs, resulted in a thermally stable contact and induced tensile stress of 5.6• 109 dyne •cm -2 at the metal layer but without degrading the adhesion. Heating at temperatures higher than 500°C resulted in an extensive interaction and degradation of the contact.

Paper Details

Date Published: 28 November 1989
PDF: 8 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962017
Show Author Affiliations
A. Katz, AT&T Bell Laboratories (United States)
S. N. G. Chu, AT&T Bell Laboratories (United States)
P. M. Thomas, AT&T Bell Laboratories (United States)
W. C. Dautremont-Smith, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices
Louis J. Messick; Rajendra Singh, Editor(s)

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