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Proceedings Paper

Annealing Conditions For Fe Doped Semi-Insulating InP
Author(s): K. Kainosho; H. Shimakura; H. Yamamoto; T. Inoue; O. Oda
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Paper Abstract

Fe doped semi-insulating InP single crystals have been grown by using highly purified InP materials. The uniformity of resistivity over the wafer was evaluated by using the three-electrode guard method with the electrode pitch of 100 μm. The uniformity of resistivity was largely improved by the recent crystal preparation. SiNx cap annealing after Si ion implantation has been performed by using these highly uniform wafers with the Fe concentration ranging from 8x1015 to 5x1016 cm-3. It was found that the uniformity is degraded when the wafer is annealed at 700°C while the uniformity is kept constant when the wafer is annealed at below 700°C. The activation efficiency was found to be maximum when the wafer is annealed at 620°C. Photoluminescence measurement clarified that wafers annealed at above 720°C show abnormal spectra at the longer wavelength region(880-980 nm).

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962016
Show Author Affiliations
K. Kainosho, Nippon Mining Co., Ltd. (Japan)
H. Shimakura, Nippon Mining Co., Ltd. (Japan)
H. Yamamoto, Nippon Mining Co., Ltd. (Japan)
T. Inoue, Nippon Mining Co., Ltd. (Japan)
O. Oda, Nippon Mining Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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