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Proceedings Paper

Technology And Drift Characteristics Of UVCVD-SiO2 / InP MISFET Devices
Author(s): P. Dimitriou; A. Falcou; P. Krauz; G. Post; A. Scavennec
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Paper Abstract

Ion implanted planar MISFET's on semi-insulating indium phosphide substrate were studied. In-situ treatment with ammonia and UV activated CVD of silicon dioxide provided for threshold voltage drift below 0.5 V on depletion-mode transistors. Inverters from enhancement/depletion transistor pairs and 19-stage ring oscillators were made.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962014
Show Author Affiliations
P. Dimitriou, CNET (France)
A. Falcou, CNET (France)
P. Krauz, CNET (France)
G. Post, CNET (France)
A. Scavennec, CNET (France)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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