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Proceedings Paper

Passivation Of InP Using A Surface Science Approach : THE Al2O3/As//InP CASE
Author(s): M. Gendry; R. Blanchet; G. Hollinger; C. Santinelli; R. Skheyta; P. Viktorovitch
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Paper Abstract

A new approach is presented for the development of a MISFET technology. It is applied to the optimization of A1203/InP structures prepared by the deposition of evaporated A1203 on arsenic stabilized InP surfaces. MBE and surface science techniques (XPS and RHEED) are used to control step by step the elaboration of the structures and to describe the microscopic properties of the interfaces. The optimization of the elaboration process is based on correlations between physico-chemical properties and MIS electrical properties. It is shown that an interfacial oxide buffer layer can favor chemical matching between A1203 and InP.

Paper Details

Date Published: 28 November 1989
PDF: 8 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962012
Show Author Affiliations
M. Gendry, UACNRS (France)
R. Blanchet, UACNRS (France)
G. Hollinger, UACNRS (France)
C. Santinelli, UACNRS (France)
R. Skheyta, UACNRS (France)
P. Viktorovitch, UACNRS (France)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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