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Proceedings Paper

The Passivation Of InP By In (PO3)3 Condensed Phosphates For MISFET Applications
Author(s): J. Joseph; Y. Robach; G. Hollinger; P. Ferret; M. Pitaval
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Paper Abstract

Very recently high quality MISFET devices have been fabricated using native In(PO3)3-like condensed phosphates. It is believed that the high performance obtained is related to the particular physicochemical and structural properties of these phosphates. They exhibit good intrinsic dielectric properties (resistivity : 10 13 Ω.cm, bandgap ~6.8 eV). A high degree of structural flexibility favors crystallo-chemical matching between the semiconductor and the oxide. Growth of these native oxides leads to a buried interface with a relatively smooth oxide/semiconductor interface (roughness of about 20 Å).

Paper Details

Date Published: 28 November 1989
PDF: 7 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962010
Show Author Affiliations
J. Joseph, URA CNRS (France)
Y. Robach, URA CNRS (France)
G. Hollinger, URA CNRS (France)
P. Ferret, Universite Claude Bernard (France)
M. Pitaval, Universite Claude Bernard (France)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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