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Proceedings Paper

Down Stream Pecvd Deposition Of Silicon Dioxide Films On InP With Improved Interface Properties
Author(s): W. Kulisch; R. Kassing
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Paper Abstract

Most InP MIS-structures developed up to now suffer from the so-called slow drift effects. These effects are thought to be caused by destruction of the InP surface during insulator deposition. We therefore developed a 'soft' downstream PECVD process to deposit silicon dioxide on InP which reduces the concentration of slow states responsible for the drift effects by more than one order of magnitude. This deposition process is not only suited for preparation of InP MIS-structures but can be used to passivate optoelectronical devices on InP as well. An example will be given with the improvement of the dark current characteristics of InP-pin-diodes.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962009
Show Author Affiliations
W. Kulisch, University of Kassel (Germany)
R. Kassing, University of Kassel (Germany)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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