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Proceedings Paper

MIS Structures On InP Using Oxide Deposited Near 100°C
Author(s): K. Vaccaro; B. R. Bennett; J. P. Lorenzo; A. Davis; H. G. Lipson
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Paper Abstract

We have deposited silicon dioxide by chemical vapor deposition at pressures of 2 to 12 torr and substrate temperatures as low as 75°C. Properties of the films on n-type InP substrates are reported. Hysteresis of less than 0.1 volts is observed in capacitance-voltage curves for the lowest-temperature depositions. For 100°C depositions surface state densities are in the low 1011 cm-2eV-1 range. Changes in the dielectric properties are observed as deposition temperature drops from 300 to 75°C. Relative dielectric constant increases from 4 to 7 and resistivity decreases from 1015 to 1012 ohm-cm. Electrical properties can be further improved by both RTA and conventional furnace annealing.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962006
Show Author Affiliations
K. Vaccaro, Rome Air Development Center (United States)
B. R. Bennett, Rome Air Development Center (United States)
J. P. Lorenzo, Rome Air Development Center (United States)
A. Davis, Rome Air Development Center (United States)
H. G. Lipson, Rome Air Development Center (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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