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Proceedings Paper

Low Temperature Dielectrics And Surface Passivation Of InP
Author(s): R. Iyer; Z. Zou; C. W. Wilmsen; D. L. Lile
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Paper Abstract

Low temperature Silicon Dioxide, deposited on InP at temperatures as low as 120°C, shows improved interfacial quality as judged by quasi-static and high frequency CV measurements. These films are highly resistive and have potential applications in a MISFET technology. Results with sulfur and selenium passivation prior to deposition of SiO2 at higher temperatures show similarly improved interfaces on InP.

Paper Details

Date Published: 28 November 1989
PDF: 6 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962002
Show Author Affiliations
R. Iyer, Colorado State University (United States)
Z. Zou, Colorado State University (United States)
C. W. Wilmsen, Colorado State University (United States)
D. L. Lile, Colorado State University (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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