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Proceedings Paper

High Performance Ion Implanted InP Misfets Passivated With An Anodic Oxide'
Author(s): A. Falcou; G. Post; P. Viktorovitch; R. Blanchet; K. Choujaa; G. Hollinger; Y. Robach; J . Joseph
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Paper Abstract

High performance MIS field effect transistors on semi-insulating indium phosphide have been fabricated. The contacts and the channel are doped with silicon implantation. The passivation of the channel surface region is achieved by the growth of a 150 A thick specific anodic oxide, In(P03)3 condensed phosphate. The physico-chemical properties of this oxide, reported in details in a separate contribution to this conference, make this material an excellent candidate for the passivation of InP. The gate dielectric is completed with electron beam evaporated Al203. Depletion mode devices with a 2 micron channel length exhibit reproducible low saturation current drift (less than 4% after 1 hour) and high transconductance (100 mS/mm). They are well suited for integrated opto-electronics.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961998
Show Author Affiliations
A. Falcou, CNET (France)
G. Post, CNET (France)
P. Viktorovitch, Ecole Centrale De Lyon (France)
R. Blanchet, Ecole Centrale De Lyon (France)
K. Choujaa, Ecole Centrale De Lyon (France)
G. Hollinger, Ecole_Centrale.De Lyon. (France)
Y. Robach, Ecole Centrale De Lyon (France)
J . Joseph, Ecole Centrale De Lyon (France)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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