Share Email Print

Proceedings Paper

High Quality InP Substrates For Advanced Electronic And Optical Devices
Author(s): T. I. Ejim; F. Simchock; E. M. Monberg
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The vertical gradient freeze technique (VGF) has been used to grow large diameter n-type, p-type and semi-insulating InP crystals. The etch pit density (EPD) of these crystals is independent of the dopant type and crystal size under the growth conditions used in this work. We will discuss the characterization results of Zn, S and Fe doped InP crystals with very low and uniformly distributed defects. The S-doped crystals have been grown at sizes up to 63 mm diameter and 1.7 kg. with a typical EPD of <2000/cm2. This EPD was obtained for S-doped crystals with free carrier concentrations in the range 3x1015-3x1018/cm3. The increase in diameter from 53 mm to 63 mm did not lead to any increase in defects and is attributed to the low axial and radial temperature gradients used in VGF technique. Fe doped semi-insulating InP crystals have been grown with resistivities exceeding 107 ohm/cm from the seed to tail end of the crystal. These crystals have EPD that are also <2000/cm2 from the seed to tail. Using glow discharge mass spectrometry and scanning electron microscopy, it is shown that at iron concentrations >7x1016/cm3 in the solid , precipitates of FeP2 occur in the crystal. Zinc doped InP is becoming increasingly more important for high efficiency, radiation hard solar conversion devices. A series of single crystals have been grown with Zn doping in the range 1-6x1017/cm3. The dislocation levels are two orders of magnitude less than those reported from comparably doped LEC material.

Paper Details

Date Published: 28 November 1989
PDF: 13 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961996
Show Author Affiliations
T. I. Ejim, AT&T Bell Labs (United States)
F. Simchock, AT&T Bell Labs (United States)
E. M. Monberg, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

© SPIE. Terms of Use
Back to Top