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Proceedings Paper

Pumping Requirements And Options For Molecular Beam Epitaxy And Gas Source Molecular Beam Epitaxy/Chemical Beam Epitaxy
Author(s): M. J. McCollum; M. A. Plano; M. A. Haase; V. M. Robbins; S. L. Jackson; K. Y. Cheng; G. E. Stillman
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Paper Abstract

The current high level of interest in the growth of InP/InGaAsP/InGaAs lattice matched to InP, has influenced many researchers to consider the use of gas sources in growth by MBE. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with higher p-type mobilities than previously reported have been grown with a diffusion pumped molecular beam epitaxial system. This demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy.

Paper Details

Date Published: 28 November 1989
PDF: 5 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961995
Show Author Affiliations
M. J. McCollum, University of Illinois at Urbana-Champaign (United States)
M. A. Plano, University of Illinois at Urbana-Champaign (United States)
M. A. Haase, University of Illinois at Urbana-Champaign (United States)
V. M. Robbins, University of Illinois at Urbana-Champaign (United States)
S. L. Jackson, University of Illinois at Urbana-Champaign (United States)
K. Y. Cheng, University of Illinois at Urbana-Champaign (United States)
G. E. Stillman, University of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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