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Proceedings Paper

Growth Of InGaAsP Films In A Multi-Wafer High-Speed Rotating Disk Reactor By MOCVD
Author(s): Mark McKee; Paul Reinert; Peter E. Norris; Richard A. Stall
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Paper Abstract

Much of the InGaAsP film growth work has been limited to small, single wafer growths. The purpose of this work was to demonstrate good materials properties, especially uniformity, on a multi-wafer system. InGaAsP materials on (100) InP substrates have been grown in a high speed rotating disk reactor using low pressure Metalorganic Chemical Vapor Deposition (MOCVD). Rotation speeds of 500 to 1500 RPM, growth pressures from 30 to 90 Torr, and trimethylindium and triethylgallium sources were used. On a three, two-inch wafer reactor, thickness uniformity of less than ±2% and lattice mismatch uniformity of less than ±1x10-4 has been repeatably obtained on both InGaAs and InGaAsP (1.2 micron wavelength). The effect of growth pressure and rotation speed on uniformity is discussed with reference to flow dynamical models of the rotating disk reactor. In addition to uniformity, good bulk properties were obtained. High purity InGaAs films with electron mobilities of 95,000cm2/VS at 77K were produced. Room temperature photoluminescence intensity of both InGaAs and InGaAsP films were similar to an LPE standard.

Paper Details

Date Published: 28 November 1989
PDF: 6 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961993
Show Author Affiliations
Mark McKee, EMCORE Corporation (United States)
Paul Reinert, EMCORE Corporation (United States)
Peter E. Norris, EMCORE Corporation (United States)
Richard A. Stall, EMCORE Corporation (United States)

Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices
Louis J. Messick; Rajendra Singh, Editor(s)

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