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Proceedings Paper

Electron-Hole Scattering And Minority-Electron Transport In In0.53Ga0.47As, InAs, And. InP: The Role Of The Split-Off Band
Author(s): K. Sadra; C. M. Maziar; B. G. Streetman
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Paper Abstract

We report a Monte-Carlo investigation of Coulomb electron-hole scattering processes involving the split-off band in selected III-V semiconductors in the context of steady-state high-field minority-electron transport. Due to the small value of the relevant hole overlap factors, as well as the relative values of the r-L energy separation and the split-off energy, such processes do not make a significant contribution to the minority electron energy loss rate in In0.53Ga0.47As. In InP, however, the rhrs process accounts for a significant fraction of the total r-electron energy loss to holes.

Paper Details

Date Published: 28 November 1989
PDF: 10 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961992
Show Author Affiliations
K. Sadra, The University of Texas at Austin (United States)
C. M. Maziar, The University of Texas at Austin (United States)
B. G. Streetman, The University of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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