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Proceedings Paper

Characterization Of InP On Si Grown By MBE
Author(s): H. Y. Lee; T. E. Crumbaker; M. J. Hafich; G. Y. Robinson; M. M. Al-Jassim; K. M. Jones
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Paper Abstract

The characterization of large area InP single crystal films grown by gas-source MBE on (100) Si substrates is described. To accomodate the 8% InP-Si lattice mismatch, a strained-layer superlattice of InGaP was used as a buffer layer. The dislocation density in the InP, as determined by TEM, was 108 cm-2 and the x-ray diffraction line width of the (400) InP peak was found to be 435 arc sec in annealed films. InP films of 3-4 pm in thickness exhibited specular morphology, low temperature photoluminescence line widths of 6-17 meV, and room temperature electron mobilities of 1900-2300 cm2/V-s. These initial results indicate that optoelectronic devices utilizing a monolithic InP/Si technology are feasible.

Paper Details

Date Published: 28 November 1989
PDF: 4 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961991
Show Author Affiliations
H. Y. Lee, Colorado State University (United States)
T. E. Crumbaker, Colorado State University (United States)
M. J. Hafich, Colorado State University (United States)
G. Y. Robinson, Colorado State University (United States)
M. M. Al-Jassim, Solar Energy Research Institute (United States)
K. M. Jones, Solar Energy Research Institute (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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