Share Email Print
cover

Proceedings Paper

Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition
Author(s): W. K. Chen; J. C. Chen; J. F. Chen; C. R. Wie; P. L. Liu; D. M. Hwang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

Paper Details

Date Published: 28 November 1989
PDF: 4 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961990
Show Author Affiliations
W. K. Chen, State University of New York at Buffalo (United States)
J. C. Chen, State University of New York at Buffalo (United States)
J. F. Chen, State University of New York at Buffalo (United States)
C. R. Wie, State University of New York at Buffalo (United States)
P. L. Liu, State University of New York at Buffalo (United States)
D. M. Hwang, Bell Communications Research, Inc. (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

© SPIE. Terms of Use
Back to Top