Share Email Print
cover

Proceedings Paper

Altering The Composition Of GaInPAs Grown By The Hydride Technique By Introducing HC1 Downstream
Author(s): K. A. Jones; V. S. Ban; G. H. Olsen; C. H. Park
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Thermodynamic calculations show that the In and Ga concentrations in GaInPAs change when HC1 is introduced down stream during growth by the hydride method. This results from HC1 reducing the incorporation of In more than it does for Ga. The effect is larger for the initially lattice matched material containing more Ga and therefore emitting light at longer wavelengths. The group V composition also changes with the As mole fraction increasing in intially lattice matched material containing less As and therefore emitting at shorter wavelengths. These results were qualitatively confirmed by experiment. Thus, in principle, lattice matched GaInPAs superlattices can be grown by periodically injecting HC1 downstream and simultaneously adjusting the PH3 and AsH3 flow rates.

Paper Details

Date Published: 28 November 1989
PDF: 7 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961989
Show Author Affiliations
K. A. Jones, Electronic Technology & Devices Laboratory (United States)
V. S. Ban, Epitaxx, Inc (United States)
G. H. Olsen, Epitaxx, Inc (United States)
C. H. Park, Epitaxx, Inc (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

© SPIE. Terms of Use
Back to Top