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Proceedings Paper

Spatially Resolved Photoluminescence Characterization Of Fe Doped Semi-Insulating lnP
Author(s): M. Erman; G. Gillardin; J. Le Bris; M. Renaud; E. Tomzig
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Paper Abstract

We present room and low temperature spatially resolved photoluminescence characterization of 2" Fe doped semi-insulating InP wafers. Quantitative informations upon microscopic and macroscopic distribution of Fe have been obtained and correlated with electrical measurements (resistivity mapping), On a wafer scale, photoluminescence images reveal growth facet and striations, while on microscopic scale, low temperature photoluminescence maps taken at two different wavelengths, the first one corresponding to the band to band transitions, the second one to the band to acceptor transitions, show acceptor impurity precipitates as well as dislocations.

Paper Details

Date Published: 28 November 1989
PDF: 8 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961987
Show Author Affiliations
M. Erman, LEP (France)
G. Gillardin, LEP (France)
J. Le Bris, LEP (France)
M. Renaud, LEP (France)
E. Tomzig, Wacker Chemitronic (Germany)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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