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Proceedings Paper

InP Based Ternary And Quaternary Thin Film Structures On Large Areas Grown By LP � Movpe
Author(s): D. Schmitz; G. Strauch,; H. Jurgensen; M. Heyen; P. Harde
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Paper Abstract

Using low pressure MOVPE and higher linear flow velocities high purity GalnAs/lnP and GalnAsP heterostructures can be prepared. Excellent homogeneity in thickness, composition, and doping on a 2" InP substrate can be realized by this approach for optimized conditions. The low growth rates required for the deposition of very narrow well structures are achieved by selecting reduced pressures of the group III and group V compounds used for deposition. The method yields structures with high electron mobilities of the two dimensional electron gas in the well and narrow PL (i.e. 2.2 meV for 20 nm wells) line widths, which is indicative of low impurity incorporation and abrupt heterojunctions. The observed energy shifts (up to 528 meV) demonstrate the large range of bandgap variation attainable by this method. A study of dopant incorporation shows, that Zn yields steep transitions in InGaAs.

Paper Details

Date Published: 28 November 1989
PDF: 6 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961984
Show Author Affiliations
D. Schmitz, AIXTRON (Germany)
G. Strauch,, AIXTRON (Germany)
H. Jurgensen, AIXTRON (Germany)
M. Heyen, AIXTRON (Germany)
P. Harde, Heintrich-Hertz-Institut for Nachrichtentechnik GmbH (Germany)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices
Louis J. Messick; Rajendra Singh, Editor(s)

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