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Proceedings Paper

Incorporation Of Residual Donor Impurities In High Purity Epitaxial Indium Phosphide
Author(s): B. Lee; M. H. Kim.; M. J. McCollum; G. E. Stillman
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Paper Abstract

The residual donor impurities in high purity InP samples grown by liquid phase epitaxial, vapor phase epitaxial, metalorganic chemical vapor deposition, and metalorganic molecular beam epitaxial techniques have been studied using high resolution Fourier transform photothermal ionization spectroscopy. Five different donor peaks corresponding to different donor species have been observed in the InP samples. The only species that have been conclusively identified, however, are Si, S, Sn, and Ge. The most common residual donor impurity species in all the samples are Si and S.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961982
Show Author Affiliations
B. Lee, University of Illinois at Urbana-Champaign (United States)
M. H. Kim., University of Illinois at Urbana-Champaign (United States)
M. J. McCollum, University of Illinois at Urbana-Champaign (United States)
G. E. Stillman, University of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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