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Proceedings Paper

Improved MBE Growth Of InGaAs-InAlAs Heterostructures For High-Performance Device Applications
Author(s): Y. C. Kao; A. C. Seabaugh; H. Y. Liu; T. S. Kim; M. A. Reed; P. Saunier; B. Bayraktaroglu; W. M. Duncan
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Paper Abstract

In this paper, we report the improvements in structural quality of the InGaAs-InAlAs heterostructures grown on InP by molecular beam epitaxy (MBE). The effect of heteroepitaxial growth parameters on modulation-doped n-InAlAs/InGaAs-InP structures is examined by Hall measurement. Practical growth conditions have been developed for device fabrication. Low-temperature (4.2 K) magnetotransport measurement and resonant tunneling spectroscopy are used to characterize the modulation-doped structures and resonant tunneling barrier structures, respectively. Both measurements indicate the high quality of the heterostructures. Barrier height effect on resonant tunneling diode structures is discussed. InAlAs-InGaAs heterojunction bipolar transistors (HBTs) and high-electron-mobility transistors (HEMTs) have been successfully fabricated on InP in this work.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961981
Show Author Affiliations
Y. C. Kao, Texas Instruments Incorporated (United States)
A. C. Seabaugh, Texas Instruments Incorporated (United States)
H. Y. Liu, Texas Instruments Incorporated (United States)
T. S. Kim, Texas Instruments Incorporated (United States)
M. A. Reed, Texas Instruments Incorporated (United States)
P. Saunier, Texas Instruments Incorporated (United States)
B. Bayraktaroglu, Texas Instruments Incorporated (United States)
W. M. Duncan, Texas Instruments Incorporated (United States)

Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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