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Proceedings Paper

Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method
Author(s): M. Tatsumi; T. Kawase; T. Araki; N. Yamabayashi; T. Iwasaki; Y. Miura; S. Murai; K. Tada; S. Akai
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Paper Abstract

Low-dislocation-density InP single crystals have been successfully grown under the low axial temperature gradient of dT/dZ = 30°C/cm by the VCZ method, which is an LEC method with phosphorus vapor pressure applied over the liquid encapsulant during growth. The average EPD is about 2,000 cm-2 in the 2-inch diameter crystals doped with Fe or Sn. The slip-free and dislocation-free crystals have been obtained by doping S of 2 x 1018cm-3 at the seed end. The InP crystals have uniform distributions of electrical properties with variations of less than 2%. The photoluminescence measurements of Sn-doped crystal have revealed no deep level due to phosphorus vacancy. The VPE InGaAs layer grown on the S-doped VCZ substrate exhibits few propagated dislocations and a very low leak current.

Paper Details

Date Published: 28 November 1989
PDF: 11 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.961978
Show Author Affiliations
M. Tatsumi, Sumitomo Electric Industries Ltd (Japan)
T. Kawase, Sumitomo Electric Industries Ltd (Japan)
T. Araki, Sumitomo Electric Industries Ltd (Japan)
N. Yamabayashi, Sumitomo Electric Industries Ltd (Japan)
T. Iwasaki, Sumitomo Electric Industries Ltd (Japan)
Y. Miura, Sumitomo Electric Industries Ltd (Japan)
S. Murai, Sumitomo Electric Industries Ltd (Japan)
K. Tada, Sumitomo Electric Industries Ltd. (Japan)
S. Akai, Sumitomo Electric Industries Ltd. (Japan)

Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices
Louis J. Messick; Rajendra Singh, Editor(s)

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