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Proceedings Paper

Grafted GaAs Detectors On Lithium Niobate And Glass Optical Waveguides
Author(s): A. Yi-Yan; W. K. Chan; T. J. Gmitter; L. T. Florez; J. L. Jackel; E. Yablonovitch; R. Bhat; J. P. Harbison
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Paper Abstract

We report the first integration of a GaAs MSM (metal-semiconductor-metal) detector with LiNbO3 and glass optical waveguides. A 250nm thick GaAs detector layer was fabricated using a recently reported lift-off technique [1] and subsequently grafted onto the waveguide chip. Proof of the optical interaction between the waveguide and its grafted detector was provided by the total absorption of 633nm guided light within a distance of 1mm from the leading edge of the GaAs layer and by the presence of a photocurrent at the detector terminals. We project that the grafting technique reported here will prove useful in the design of new and cost effective optoelectronic devices.

Paper Details

Date Published: 6 December 1989
PDF: 6 pages
Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); doi: 10.1117/12.961907
Show Author Affiliations
A. Yi-Yan, Bellcore (United States)
W. K. Chan, Bellcore (United States)
T. J. Gmitter, Bellcore (United States)
L. T. Florez, Bellcore (United States)
J. L. Jackel, Bellcore (United States)
E. Yablonovitch, Bellcore (United States)
R. Bhat, Bellcore (United States)
J. P. Harbison, Bellcore (United States)

Published in SPIE Proceedings Vol. 1141:
5th European Conf on Integrated Optics: ECIO '89
Alain Carenco; Daniel B. Ostrowsky; Michel Roger Papuchon, Editor(s)

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