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Proceedings Paper

Bistability In Semiconductor Etalons And Lasers
Author(s): Olof Sahlen; Ulf ohlander; Ulf Olin; Peter Blixt; Eric Masseboeuf; Gunnar Landgren; Michael Rask; Nils Nordell
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Paper Abstract

Advances in the area of bistable semiconductor etalons and inhomogeneously pumped laser diodes are reviewed. Results concerning a novel method to fabricate thin AlGaAs etalons that can be thermally stable for 0.5 seconds is presented. The method is based on results from a rigorous numerical model for the temperature rise. Furthermore, results from optical triggering of multisection InGaAsP lasers at 500 MHz repetition rate with less than 1 fJ optical switching energy are reported.

Paper Details

Date Published: 6 December 1989
PDF: 7 pages
Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); doi: 10.1117/12.961899
Show Author Affiliations
Olof Sahlen, Royal Institute of Technology (Sweden)
Ulf ohlander, Royal Institute of Technology (Sweden)
Ulf Olin, Royal Institute of Technology (Sweden)
Peter Blixt, Royal Institute of Technology (Sweden)
Eric Masseboeuf, Royal Institute of Technology (Sweden)
Gunnar Landgren, Swedish Institute of Microelectronics (Sweden)
Michael Rask, Swedish Institute of Microelectronics (Sweden)
Nils Nordell, Swedish Institute of Microelectronics (Sweden)


Published in SPIE Proceedings Vol. 1141:
5th European Conf on Integrated Optics: ECIO '89

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