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Proceedings Paper

Numerical Simulation Of The Nonlinear Response In A P.I.N. InGaAs Waveguide-Type Photodiode Under Intense Illumination
Author(s): Martin Dentan; Baudouin de Cremoux
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Paper Abstract

The paper deals with the study and numerical simulation of the nonlinear electrical response of a waveguide-type P.I.N. InGaAs photodiode under intense illumination conditions, including the harmonic generation rate calculation. Indeed, significant optical power absorption in a small-sized device (i.e. microwave waveguide-type P.I.N. photodiode) can perturb, by space-charge effects, the electric field which governs the carrier transport, and then induce a nonlinear electrical response. The device depolarization, due to the current flow in the load circuit, also causes a nonlinearity via the internal electric field perturbation. These nonlinearities induce harmonics, and we investigate especially the third-order harmonics creation, which is closely connected to the third-order intermodulation products term in any narrow-band multichannel network.

Paper Details

Date Published: 6 December 1989
PDF: 8 pages
Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); doi: 10.1117/12.961895
Show Author Affiliations
Martin Dentan, THOMSON-CSF (France)
Baudouin de Cremoux, THOMSON-CSF (France)

Published in SPIE Proceedings Vol. 1141:
5th European Conf on Integrated Optics: ECIO '89

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