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Proceedings Paper

Monolithic Integration Of GaAs Electronics And Inp Waveguides For Long Wavelength Optical Switching Networks.
Author(s): A. Ackaert; P. Demeester; D. Lootens; P. Van Daele; D. Rondi; G Glastre; Y. Bourbin; A. Enard; R. Blondeau; M. Papuchon
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Paper Abstract

GaAs MESFETs are very promising for the fabrication of the electronic part of long wavelength InP-based optoelectronic integrated circuits. A special growth procedure has been developed for the heteroepitaxial growth of GaAs on InP. This resulted in MESFET performances similar to results obtained on GaAs substrates. A transconductance of 100 mS/mm and a cutt-off frequency of 7 GHz was obtained for 1.5μm gate MESFETs. The monolithic integration of GaAs MESFETs and InP buried waveguides did not influence their performances.

Paper Details

Date Published: 6 December 1989
PDF: 7 pages
Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); doi: 10.1117/12.961886
Show Author Affiliations
A. Ackaert, University of Gent (Belgium)
P. Demeester, University of Gent (Belgium)
D. Lootens, University of Gent (Belgium)
P. Van Daele, University of Gen (Belgium)
D. Rondi, Thomson-CSF/LCR (France)
G Glastre, Thomson-CSF/LCR (France)
Y. Bourbin, Thomson-CSF/LCR (France)
A. Enard, Thomson-CSF/LCR, (France)
R. Blondeau, Thomson-CSF/LCF (France)
M. Papuchon, Thomson-CSF/LCR (France)


Published in SPIE Proceedings Vol. 1141:
5th European Conf on Integrated Optics: ECIO '89

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