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Proceedings Paper

GaAs/A1GaAs Double Heterostructure Laser Monolithically Integrated With Passive Waveguide
Author(s): D. Remiens; L. Menigaux; L. Dugrand; G Ben Assayag; J. Gierak; P. Sudraud
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Paper Abstract

Monolithic integration of a double heterostructure laser butt-coupled to an optical waveguide is demonstrated on GaAs. The flexibility offered by Focused Ion Beam Etching (F.I.B.E.) is used in this work to fabricate Fabry-Perot resonators. The monolithic device exhibits a threshold current of 90 mA in pulsed operation and an optical power output of 7 mW is measured from the waveguide.

Paper Details

Date Published: 6 December 1989
PDF: 3 pages
Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); doi: 10.1117/12.961883
Show Author Affiliations
D. Remiens, Laboratoire de Bagneux (France)
L. Menigaux, Laboratoire de Bagneux (France)
L. Dugrand, Laboratoire de Bagneux (France)
G Ben Assayag, Groupement Scientifique CNET-CNRS (France)
J. Gierak, Groupement Scientifique CNET-CNRS (France)
P. Sudraud, Groupement Scientifique CNET-CNRS (France)

Published in SPIE Proceedings Vol. 1141:
5th European Conf on Integrated Optics: ECIO '89
Alain Carenco; Daniel B. Ostrowsky; Michel Roger Papuchon, Editor(s)

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