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Proceedings Paper

Infra-Red Microscopy Of Electronic Substrates
Author(s): Paul C Montgomery; Jean-Pierre Fillard; Pascale Gall; Michel Castagne
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Paper Abstract

Techniques for high resolution mapping of chemical and native crystal defects in semiconductor substrates are required for basic materials research as well as for quality control in the industrial manufacturing of wafers for electronic devices. Because of the relative ease of use, near infra-red microscopy has recently become popular. Imaging in 350μm thick wafers at a wavelength of 1.0μm presents special problems, particularly with the refractive index of the material being as high as 3.5. The bright field mode is capable of revealing the larger micro-precipitates of around 1μm in size in GaAs, doped GaAs and InP. An improvement in contrast is achieved with the dark field mode. Phase contrast microscopy can be used to show growth striations in doped GaAs and even the paths of disloca-tion lines under certain conditions. One emerging technique is Laser Scanning Tomography (LST) which uses a scanned Nd-YAG laser beam (1.06μm) to reveal micro-precipitates smaller than the diffraction limit of the imaging system. High contrast images are produced showing a more complete picture of micro-precipitates in GaAs, doped GaAs, InP and Si. Tomography can be used to observe the development of the nucleation of oxide precipitates in silicon, from the embryonic stage of particles as small as 20Å, through to larger particles of the order of 1μm. Some of the problems and latest results using these different techniques in this interesting applications area are presented and discussed.

Paper Details

Date Published: 28 September 1989
PDF: 6 pages
Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); doi: 10.1117/12.961772
Show Author Affiliations
Paul C Montgomery, Universite des Sciences et Techniques du Languedoc (France)
Jean-Pierre Fillard, Universite des Sciences et Techniques du Languedoc (France)
Pascale Gall, Universite des Sciences et Techniques du Languedoc (France)
Michel Castagne, Universite des Sciences et Techniques du Languedoc (France)


Published in SPIE Proceedings Vol. 1139:
Optical Storage and Scanning Technology
Tony Wilson, Editor(s)

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