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Proceedings Paper

Theoretical Aspects Of Semiconductor Imaging
Author(s): P. D. Pester; T. Wilson
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Paper Abstract

A discussion is given of the various factors effecting the minority carrier distribution excited in a semiconducting sample by a focused light beam. Parameters considered include the objective lens numerical aperture, the surface recombination velocity and the exciting beam scan speed. The discussion is aimed at producing a theoretical understanding of the optical beam induced current (OBIC) and photoluminescence (PL) semiconductor imaging techniques.

Paper Details

Date Published: 28 September 1989
PDF: 9 pages
Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); doi: 10.1117/12.961771
Show Author Affiliations
P. D. Pester, Scientific Generics Ltd (United Kingdom)
T. Wilson, Oxford University (United Kingdom)


Published in SPIE Proceedings Vol. 1139:
Optical Storage and Scanning Technology

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