Share Email Print

Proceedings Paper

Pulsed U.V. Laser Cleaning Of GaSb Single Crystal Surface In Ultra-High-Vacuum
Author(s): E. J. Petit; V. M. Humblet; A. Brezini; R. Caudano; A. Gouskov; G. Bougnot
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Surface modifications induced to GaSb single crystals by pulsed U.V. laser annealing (PLA) in ultra-high-vacuum have been studied. The (111) surfaces of GaSb single crystals were prepared by a mechanical and chemical etching before introducing into vacuum. The samples were subsequently exposed in vacuum to the U.V. radiation (193 nm) of an high power excimer laser. The analysis by Auger electron spectroscopy performed in situ shows that an atomically clean surface (free of native oxides and of carbon pollution) can be achieved by PLA. The effects of the Energy Density (ED) and of the repetition of the PLA are addressed. Superficial topology changes observed in situ by low resolution scanning electron microscopy, and later by optical microscopy, are described too. From our observations we conclude that She antimony oxides begin to decompose noticely when the surface is irradiated with 50 mJ/cm2 laser pulses. Their evaporation explains the onset of the sharp chemical reduction observed at higher fluences. We propose that superficial melting of the GaSb single crystal starts as soon as the laser beam ED reaches 100 mJ/cm . Beyond this fluence the superficial chemical reduction is completed not only by evaporation, but also : - first : by thermal stress induced fracture of the gallium oxide layer and its ejection due to the strong evaporation from the substrate, and, - second : by the gallium oxide dissolution into the melt. The amount of antimony segregated on ple surface becomes important when the surface melts deeply (i.e. at ED superior of 150 mJ/cm2).

Paper Details

Date Published: 11 October 1989
PDF: 8 pages
Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); doi: 10.1117/12.961764
Show Author Affiliations
E. J. Petit, ISIS (Belgium)
V. M. Humblet, ISIS (Belgium)
A. Brezini, ISIS (Belgium)
R. Caudano, ISIS (Belgium)
A. Gouskov, Universite des Sciences et Techniques du Languedoc (France)
G. Bougnot, Universite des Sciences et Techniques du Languedoc (France)

Published in SPIE Proceedings Vol. 1138:
Optical Microlithography and Metrology for Microcircuit Fabrication
Michel J. Lacombat; Stefan Wittekoek, Editor(s)

© SPIE. Terms of Use
Back to Top