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Proceedings Paper

Characteristics Of High Power GaAlAs Laser Diodes Useful For Space Application
Author(s): W. S. Streifer; D. F. Welch; D. S. Evans; D. Scifres
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Paper Abstract

Single quantum well laser diode arrays with emitting apertures of 200 um have operated up to 8 W cw. Monolithic multi-element arrays with emitting apertures of 1 cm are capable of cw operation up to 76 W cw. Devices fabricated using MOCVD epitaxial growth techniques and highly efficient single quantum well active region structures have exhibited high cw power and high efficiency. Catastrophic power limits of 8 W cw have been demonstrated by a 20 emitter multistripe laser diode with emitting aperture of 200 um. Similar structures consisting of 10 emitters in a 100 um aperture have operated to 6 W cw. (Fig. 1)

Paper Details

Date Published: 6 October 1989
PDF: 13 pages
Proc. SPIE 1131, Optical Space Communication, (6 October 1989); doi: 10.1117/12.961540
Show Author Affiliations
W. S. Streifer, Spectra Diode Labs (United States)
D. F. Welch, Spectra Diode Labs (United States)
D. S. Evans, Spectra Diode Labs (United States)
D. Scifres, Spectra Diode Labs (United States)

Published in SPIE Proceedings Vol. 1131:
Optical Space Communication

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