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Proceedings Paper

Reversible Semiconductor-To-Metal Transition Of VO[sub]x[/sub] Thin Films Prepared By The Sol-Gel Method
Author(s): L. S. Hou; S. W. Lu; F. X. Gan
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Paper Abstract

Using VO(i-0C3H7)3 as the starting material VOx thin films have been prepared on silica glass substrates by the Sol-Gel dip-coating method and the subsequent heat treatment under vacuum conditions. These thin films show a reversible semiconductor-to-metal phase transition at 67°C. The change of transmittance in the near IR region due to the phase transition is as high as 50%. Infrared spectra show that the value of x is close to 2.

Paper Details

Date Published: 21 December 1989
PDF: 6 pages
Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); doi: 10.1117/12.961470
Show Author Affiliations
L. S. Hou, Shanghai Institute of Optics and Fine Mechanics (China)
S. W. Lu, Shanghai Institute of Optics and Fine Mechanics (China)
F. X. Gan, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1128:
Glasses for Optoelectronics

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