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Proceedings Paper

Glassy Dopant Deposits On Semiconductor Surfaces Prepared By Sol Gel Technique
Author(s): Brita Unger; Ulrich Schade; Manfred Hahnert; Klaus Vogel
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Paper Abstract

A suitable (concerning long time stability) homogeneous starting silica sol was investigated using the so-called molybdate method and viscosity measurements. For the intendet doping process of AIIIBV-compounds different solutions of zinc salts were added to the silica sols. The long time aging process (polycondensation, gelling) was controlled by the mentioned methods. The semiconductor surfaces were coated by spinning on. Zinc diffusion profiles after different heating regimes were discussed by SIMS and C/V measurements.

Paper Details

Date Published: 21 December 1989
PDF: 8 pages
Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); doi: 10.1117/12.961431
Show Author Affiliations
Brita Unger, Academy of Sciences of GDR (Germany)
Ulrich Schade, Academy of Sciences of GDR (Germany)
Manfred Hahnert, Academy of Sciences of GDR (Germany)
Klaus Vogel, Academy of Sciences of GDR (Germany)

Published in SPIE Proceedings Vol. 1128:
Glasses for Optoelectronics
Giancarlo C. Righini, Editor(s)

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