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Proceedings Paper

Optical Switching In GaAs/AlAs Multiple Quantum Well Fabry-Perot Resonators
Author(s): W. Kowalsky; T. Hackbarth; K.-J. Ebeling
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Paper Abstract

A multiple quantum well layer on top of a dielectric reflector is used as an optical switching device. With a test beam at λt = 868 nm and a 1 mW control beam at λc = 790 nm a switching contrast of 10:1 is achievOd. This high modulation depth is enabled by the coincidence of an excitonic resonance and a Fabry-Perot resonance. Excess carrier lifetimes of a few ns allow for bit rates of ca. 100Mb/s.

Paper Details

Date Published: 22 December 1989
PDF: 4 pages
Proc. SPIE 1127, Nonlinear Optical Materials II, (22 December 1989); doi: 10.1117/12.961410
Show Author Affiliations
W. Kowalsky, Technical University of Braunschweig (Germany)
T. Hackbarth, Technical University of Braunschweig (Germany)
K.-J. Ebeling, Technical University of Braunschweig (Germany)

Published in SPIE Proceedings Vol. 1127:
Nonlinear Optical Materials II

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