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Proceedings Paper

Effect Of RF Sputtering Parameters On ZnO Films Deposited Onto Inp Substrates
Author(s): Yan K. Su; Shi L. Chen
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Paper Abstract

ZnO films deposited onto InP substrates by using sputtering has been studied. Several sputtering parameters including RF power, substrate temperature and oxygen content have been investigated to get a better ZnO thin films. The suitable ratio of oxygen and argon makes an important role in getting high guality films. 20% oxygen content is the best one for sputtered ZnO films. From SEM measurements and the etching patterns, a fine dense grain structure with a smooth interface and fine growth pattern can be obtained.

Paper Details

Date Published: 8 January 1990
PDF: 7 pages
Proc. SPIE 1125, Thin Films in Optics, (8 January 1990); doi: 10.1117/12.961351
Show Author Affiliations
Yan K. Su, National Cheng Kung University (Taiwan)
Shi L. Chen, National Cheng Kung University (Taiwan)

Published in SPIE Proceedings Vol. 1125:
Thin Films in Optics
Theo T. Tschudi, Editor(s)

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