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Proceedings Paper

Influence Of Interfacial Oxide On Ion Mixing Of Al Bilayers: Measurement Of Interfacial Oxide
Author(s): X.-A . Zhao; T. C. Banwell; M-A . Nicolet
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Paper Abstract

The elastic resonance scattering of 3.05 MeV 4He++by 160 is studied for the case where the oxygen is present as an interfacial impurity between a Si substrate and a metallic overlain film. A simple model is developed and experimentally tested to describe the effect of the overlayer on the excitation curve and on the incident beam energy required to obtain resonance. This analytical method is very useful to study the influence of interfacial oxygen on the reaction of metallic overlayers, as shown by specific results with Al.

Paper Details

Date Published: 26 June 1986
PDF: 6 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961216
Show Author Affiliations
X.-A . Zhao, California Institute of Technology (United States)
T. C. Banwell, California Institute of Technology (United States)
M-A . Nicolet, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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