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Proceedings Paper

Tantalum And Niobium Silicides Formed By Scanning Electron Beam
Author(s): Zhan Guobing; Wang yangyuan; Lin shi-Chang; Zhang yan sheng; Fan bing lin
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Paper Abstract

The properties and structures of tantalum and niobium silicides formed by rapid annealing of scanning Electron Beam have been investigated. The fine layers of tantalum and silicon Niobium and silicon were deposited by co-sputtering system and co-evaporating system, respectively. The Scanning Electron beam Equipment with quasi-linear source was used to realize the rapid annealing for forming the TaSi2 and NbSi2. The x-ray diffraction RBS and TEM have been used to characterize the Composition and structure of silicide film. The best conditions of forming silicides has been presented. The single phase TaSi2 and NbSi2 and the resistivity of 50 Micro Ohm-Cm have been obtained in annealing time of 10-100 seconds. The results have been compared with those of furnace thermal annealing.

Paper Details

Date Published: 26 June 1986
PDF: 7 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961215
Show Author Affiliations
Zhan Guobing, Peking University Beijing (China)
Wang yangyuan, Peking University Beijing (China)
Lin shi-Chang, Academia Sinica (China)
Zhang yan sheng, Academia Sinica (China)
Fan bing lin, Academia Sinica (China)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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