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Proceedings Paper

Structure And Electrical Properties Of Metal-GaAs Interfaces
Author(s): Z. Liliental-Weber
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Paper Abstract

The structure and related electrical properties of ohmic Au-Ni-Ge contacts, and Schottky: TiSi2 and Au contacts are reviewed in this paper. Defects present in GaAs beneath the metal (anion rich - As accumulation) were suggested to be responsible for Schottky level pinning. It was shown that residual oxygen on the GaAs surface prior to metal deposition can strongly influence the interface abruptness, contact parameters and reliability of both ohmic and Schottky contacts.

Paper Details

Date Published: 26 June 1986
PDF: 7 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961213
Show Author Affiliations
Z. Liliental-Weber, University of California (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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