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Proceedings Paper

Properties And Applications Of Molecular Beam Epitaxial Silicides
Author(s): K. L. Wang
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Paper Abstract

Metal silicides are now being used as an integral part of microelectronic technology. The possiblility of epitaxial deposition affords additional potentials for many device and integrated circuit applications. Molecular beam epitaxy (MBE) has been successfully used to grow morphologically uniform epi-CoSi2 and Ni2Si2 films on Si although a significant lattice mismatch is present. Using MBE, multi-layered structures have also been demonstrated without observable interdiffusion among the layers. Apparently, the strain is totally accommodated in the pseudomorphic growth. In this review, the crystallinity and morphological quality of epitaxial heterostructures grown by MBE and solid phase epitaxy will be discussed. The crystallinity is characterized with Rutherford backscattering spectroscopy, electron loss spectroscopy and x-ray diffraction while the surface morphology is determined from scanning electron microscopy. Uniform silicide films are grown successfully if the film thickness is limited. More recent works on the study of Si/Silicide/Si along with other multi-quantum well structures are discussed. Demonstrated and potential device applications using these MBE films are described.

Paper Details

Date Published: 26 June 1986
PDF: 7 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961212
Show Author Affiliations
K. L. Wang, University of California (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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