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Proceedings Paper

Recent Progress In Epitaxial Growth Of Semiconducting Materials On Stabilized Zirconia Single Crystals.
Author(s): L. M. Mercandalli; D. Dieumegard; M. Croset; J. Siejka
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Paper Abstract

The present understanding of the properties of heteroepitaxial Si films grown on yttria stabilized zirconia single crystals (YSZ) is reviewed with particular emphasis on the properties of Si films resulting from high temperature post oxidation treatment. The crystalline, physic() chemical and electrical properties of Si films obtained by pyrolysis of SiH4 have been characterized by various analytical techniques. The results indicate that under carefully controlled deposition conditions, the crystalline quality (density of defects, of grain boundaries ....) is better for Si deposited on YSZ (SOZ structure), than for Si deposited on sapphire (SOS structure). The Si films, as deposited on YSZ, are highly resistive (cil -,_, 105 Q cm) ; a high temperature annealing in neutral atmosphere improves the quality of the films. In contrast to SOS, self doping is absent in SOZ structures (p lir O. cm). Further

Paper Details

Date Published: 26 June 1986
PDF: 28 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961209
Show Author Affiliations
L. M. Mercandalli, L.C.R. Thomson-C.S.F. (France)
D. Dieumegard, L.C.R. Thomson-C.S.F. (France)
M. Croset, L.C.R. Thomson-C.S.F. (France)
J. Siejka, Universite Paris VII (France)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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