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Proceedings Paper

Silicon-On-Insulator Technology By Heteroepitaxial Growth Of Fluorides
Author(s): Robin F. C. Farrow
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Paper Abstract

Progress in the growth and fabrication of silicon-on-insulator (SOI) structures, based on heteroepitaxial growth of CaF2 films on silicon, is reviewed. This approach has led to prototype SOI structures, such as MOSFETS, with promising performance. The combination of silicide and fluoride heteroepitaxy on silicon may lead eventually to multiple level SOI device structures.

Paper Details

Date Published: 26 June 1986
PDF: 8 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961208
Show Author Affiliations
Robin F. C. Farrow, IBM Almaden Research Center (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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