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Proceedings Paper

Epitaxial Growth On SIMOX Wafers
Author(s): Hon Wai Lam
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Paper Abstract

The top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin (less than 500 nm) and because of the material structure of the SIMOX wafer, special care has to be exercised in order to obtain desirable epitaxial growth. This paper describes the unique problems of epitaxial growth on SIMOX.

Paper Details

Date Published: 26 June 1986
PDF: 3 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961207
Show Author Affiliations
Hon Wai Lam, LAM Associates (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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