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Proceedings Paper

The Effects Of Rapid Thermal Annealing On Si-Implanted GaAs
Author(s): R. N. Legge; W. M. Paulson
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Paper Abstract

Undoped and Cr-doped LEC GaAs substrates were implanted with Si at 150 keV with doses from 4x1012 to 1x1014/cm2. The wafers were encapsulated with sputtered Si3Nt1 and annealed in a flash-lamp system at temperatures from 850 to 1025°C for times between 5 and 80 seconds. Channel dose implants into undoped LEC wafers give mobilities between 4700 and 4800 cm2/V-s for 1000°C, 5 sec. anneals, which are comparable with furnace annealed wafers. A sheet resistance of 61 ohms/sq and a mobility of 2500 cm2/V-s was obtained for a 1x1014/cm2 implant dose. Reproducible threshold voltages can be obtained for both undoped and Cr-doped substrates using rapid thermal annealing.

Paper Details

Date Published: 26 June 1986
PDF: 9 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961206
Show Author Affiliations
R. N. Legge, Motorola Inc. (United States)
W. M. Paulson, Motorola Inc. (United States)

Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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