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Proceedings Paper

Proton Bombarded Gallium Arsenide: Opto-Electronic Effects
Author(s): J. M. Zavada; H. A. Jenkinson; D. C. Larson
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Paper Abstract

Proton bombardment of doped gallium arsenide is known to produce electrical compensation and optical changes within the implanted material. In semi-conductor processing this technique has found wide application ranging from electrical device isolation to laser fabrication. This paper addresses recent advances in this technology with emphasis on opto-electronic developments. Components and devices formed through this process are reviewed as well as the optical and electrical properties of the bombarded material.

Paper Details

Date Published: 26 June 1986
PDF: 5 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961203
Show Author Affiliations
J. M. Zavada, U.S. Army Research Office (United States)
H. A. Jenkinson, U.S.Army Armament R&D Center (United States)
D. C. Larson, Drexel University (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

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