Share Email Print
cover

Proceedings Paper

Proton Bombarded Gallium Arsenide: Opto-Electronic Effects
Author(s): J. M. Zavada; H. A. Jenkinson; D. C. Larson
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Proton bombardment of doped gallium arsenide is known to produce electrical compensation and optical changes within the implanted material. In semi-conductor processing this technique has found wide application ranging from electrical device isolation to laser fabrication. This paper addresses recent advances in this technology with emphasis on opto-electronic developments. Components and devices formed through this process are reviewed as well as the optical and electrical properties of the bombarded material.

Paper Details

Date Published: 26 June 1986
PDF: 5 pages
Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961203
Show Author Affiliations
J. M. Zavada, U.S. Army Research Office (United States)
H. A. Jenkinson, U.S.Army Armament R&D Center (United States)
D. C. Larson, Drexel University (United States)


Published in SPIE Proceedings Vol. 0623:
Advanced Processing and Characterization of Semiconductors III
Devindra K. Sadana; Michael I. Current, Editor(s)

© SPIE. Terms of Use
Back to Top